| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which gate parasitic oscillation hardly arises relative to a conventional semiconductor device. <P>SOLUTION: A semiconductor device 10 includes a drift layer 5 constituted by a reference concentration layer 4 and a low concentration layer 3, a gate electrode structure 20, a pair of source regions 8a and 8b, a pair of base regions 7a and 7b, depletion layer extending regions 6a and 6b provided in the reference concentration layer 4 beneath bottom sections of the base regions 7a and 7b. The depletion layer extending regions 6a and 6b are formed so that bottom faces of the depletion layer extending regions 6a and 6b are lower than an interface level of the low concentration layer 3 and the reference concentration layer 4 in depth and intrude into the low concentration layer 3. On a surface of the reference concentration layer 4, a diffusion layer 30 for reducing dV<SB POS="POST">DS</SB>/dt which includes an n-type impurity in a higher concentration than in the concentration in which the reference concentration layer 4 includes it and is for reducing dV<SB POS="POST">DS</SB>/dt when switching off is formed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
