| 摘要 |
<P>PROBLEM TO BE SOLVED: To control an A/C ratio appropriately according to a process. <P>SOLUTION: There is provided a plasma processing method using a plasma processing apparatus in which a high-frequency power for plasma generation is applied from a first high-frequency power supply 140 to generate plasma in plasma processing space U in a processing container. The plasma processing apparatus comprises a second high-frequency power supply 150 applying a high-frequency power for bias, and an adjustment mechanism 200 having at least one part contacting an interior wall of a processing container 100 that forms the plasma processing space U and vertically moving in the processing container to adjust a ground capacity of plasma processing space U. In the plasma processing method, the adjustment mechanism 200 is positioned at an upper side of a movable range if the high-frequency power applied from the second high-frequency power supply 150 is equal to or less than 500 W, while the adjustment mechanism 200 is positioned at a lower side of the movable range if the high-frequency power applied from the second high-frequency power supply 150 is equal to or more than 1500 W. <P>COPYRIGHT: (C)2012,JPO&INPIT |
