| 摘要 |
A mixture of perhalogenic acid and sulfuric acid is unexpectedly stable at high temperatures and is effective in stripping photoresists, including difficult to treat ion-implanted photoresists, with short processing times. In use, no decomposition of the mixture is observed up to a temperature of 145° C. In the mixture, the sulfuric acid is highly purified and has a concentration of 96 wt % or greater. The perhalogenic acid is preferably H5IO6.
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