Verfahren zum Bilden einer Pufferschicht-Architektur auf Silizium und dadurch gebildete Strukturen,申请号DE200911000917T-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	Verfahren zum Bilden einer Pufferschicht-Architektur auf Silizium und dadurch gebildete Strukturen
摘要
申请公布号	DE112009000917(A5)	申请公布日期	2011.11.10
申请号	DE200911000917T	申请日期	2009.06.08
申请人	INTEL CORPORATION	发明人	HUDAIT, MANTU K.;TOLCHINSKY, PETER G.;CHOW, LOREN A.;LOUBYCHEV, DIMITRI;FASTENAU, JOEL M.;LIU, AMY W. K.
分类号	H01L21/20;H01L29/78	主分类号	H01L21/20
代理机构		代理人
主权项
地址

您可能感兴趣的专利

PREPARATION OF CATALYST FOR PREPARING METHACROLEIN AND METHACRYLIC ACID

METHOD FOR RESTORING OPTICAL CARD

GLASS-CERAMIC SINTERED BODY

TRANSISTOR, APPLICATION OF THE SAME AND TRANSISTOR CIRCUIT

CURRENT CONTROLLER FOR AC MOTOR

PURIFICATION OF FACTOR VIII

METHOD FOR SEPARATING AND TRANSFERRING ION EXCHANGE RESIN

HYBRID INTEGRATED CIRCUIT BOARD

METHOD AND APPARATUS FOR RECOVERING SOLVENT

SYNCHRONIZATION PROTECTION CIRCUIT FOR FRAME SYNCHRONIZATION DEVICE

METHOD OF GIVING RELAXATION TO OPTICAL FIBER OF OPTICAL FIBER COMPOSITE OVERHEAD GROUNDING WIRE

METHOD OF GROUNDING SUBMERGED ELECTRIC MACHINE

SEMICONDUCTOR DEVICE

HINGE OF DOOR FOR CAR

(A) ;MANUFACTURE OF TUBULAR PLASTIC VESSEL

METHOD OF CONTROLLING VOLTAGE OF MAGNET OF MAGNETIC FLOATING TRACK

MANUFACTURE OF FIELD EFFECT TRANSISTOR