发明名称 SYSTEMS AND METHODS FOR COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) DIFFERENTIAL ANTENNA SWITCHES USING MULTI-SECTION IMPEDANCE TRANSFORMATIONS
摘要 Example embodiments of the invention are directed to CMOS differential antenna switches with multi-section impedance transformation. The differential architecture can provide relief from large voltage swings of the power amplifiers by distributing the voltage stress over the receiver switch with two of the identical or substantially similar single-ended switches. In order to reduce the voltage stress further, multi-section impedance transformations can be used. Degraded insertion loss due to the impedance transformation technique can be compensated by selecting an optimal impedance for the antenna switch operation. Accordingly, the use of the multi-section impedance transformations with the differential antenna switch architecture enables high power handling capability for the antenna switch with acceptable efficiency for the transmitter module.
申请公布号 US2011273355(A1) 申请公布日期 2011.11.10
申请号 US20100773222 申请日期 2010.05.04
申请人 SAMSUNG ELECTRO-MECHANICS COMPANY 发明人 AHN MINSIK;LEE CHANG-HO
分类号 H01Q1/50;H01Q3/24 主分类号 H01Q1/50
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