发明名称 HOLE DOPING OF GRAPHENE
摘要 <p>An article includes a layer of graphene having a first work function; and a metal oxide film disposed on the layer of graphene, the metal oxide film having a second work function greater than the first work function. Electrons are transferred from the layer of graphene to the metal oxide film, forming a hole accumulation layer in the layer of graphene.</p>
申请公布号 WO2011139236(A1) 申请公布日期 2011.11.10
申请号 WO2011SG00177 申请日期 2011.05.05
申请人 NATIONAL UNIVERSITY OF SINGAPORE;CHEN, WEI;CHEN, ZHENYU;WEE, THYE SHEN ANDREW;XIE, LANFEI;WANG, XIAO;SUN, JIATAO;ARIANDO 发明人 CHEN, WEI;CHEN, ZHENYU;WEE, THYE SHEN ANDREW;XIE, LANFEI;WANG, XIAO;SUN, JIATAO;ARIANDO
分类号 H01L29/00;C01B31/04 主分类号 H01L29/00
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