| 发明名称 |
METHOD OF SELECTIVELY FORMING ATOMICALLY FLAT PLANE ON DIAMOND SURFACE, DIAMOND SUBSTRATE PRODUCED BY THE METHOD, AND SEMICONDUCTOR ELEMENT EMPLOYING THE SAME |
| 摘要 |
<p>[Object] The present invention provides a method of selectively forming a flat plane on an atomic level on a diamond (001), (110) or (111) surface. [Means for Solving Problems] A method of selectively forming a flat plane on a diamond surface comprising growing diamond on a stepped diamond surface of any of crystal structures (001), (110) and (111) by CVD (Chemical Vapor Deposition) under growth conditions such that step-flow growth of diamond is carried out thereafter.</p> |
| 申请公布号 |
EP2023381(A4) |
申请公布日期 |
2011.11.09 |
| 申请号 |
EP20070742189 |
申请日期 |
2007.04.23 |
| 申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY |
发明人 |
TOKUDA, NORIO;UMEZAWA, HITOSHI;YAMASAKI, SATOSHI |
| 分类号 |
H01L21/205;C23C16/27;C23C16/511;C30B25/20;C30B29/04;H01L21/02 |
主分类号 |
H01L21/205 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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