| 摘要 |
PROBLEM TO BE SOLVED: To provide an insulating film having a skeletal structure constituted by the coupling of silicon (Si) and oxygen (O) and planarity, a structure of a wiring board having high adhesiveness and low resistance, and to provide their manufacturing methods. SOLUTION: In a contact hole that is formed by an insulating film having a skeletal structure constituted by the coupling of silicon (Si) and oxygen (O) and a conductive film with a part exposed, a wiring board has a conductive film with the composition ratio of a nitrogen element of 7 atomic percent or more and under 44 atomic percent formed. By the structure, it is possible to improve the adhesiveness of the insulating film having the skeletal structure constituted by the coupling of silicon and oxygen with wiring without enhancing the contact resistance between the wiring and the contact part. Thus, a semiconductor device is formed with a high yield. COPYRIGHT: (C)2005,JPO&NCIPI |
