| 摘要 |
This invention provides a magnetic memory element, and a method of driving such an element, which enable reduction of the current density during switching, without detracting from readout durability, retention characteristics, or other aspects of reliability. A magnetic memory element has a magnetic tunnel junction portion 20 with a spin-valve structure having a free layer 15 formed of a perpendicular magnetization film, a pinned layer 13 formed of a perpendicular magnetization film, and a nonmagnetic layer 14 sandwiched between the free layer 15 and the pinned layer 13, and records information by application of an electric pulse to the magnetic tunnel junction portion 20. An in-plane magnetization film 17, interposed in the path of the electric pulse, is disposed in the magnetic tunnel junction portion 20. The in-plane magnetization film 17 is configured so as to exhibit antiferromagnetic (low-temperature)-ferromagnetic (high-temperature) phase transitions depending on temperature changes based on application of the electric pulse to the magnetic tunnel junction portion 20. A method of driving a magnetic memory element has a step of providing, in the magnetic tunnel junction portion 20, an in-plane magnetization film 17 which exhibits antiferromagnetic (low-temperature)-ferromagnetic (high-temperature) phase transitions according to temperature; a step, during information record/erase, of applying an electric pulse of polarity suitable for information record/erase to the magnetic tunnel junction portion 20 via the in-plane magnetization film 17; and a step, during information readout, of applying an electric pulse of polarity suitable for information readout to the magnetic tunnel junction portion 20 via the in-plane magnetization film 17, to cause the temperature of the in-plane magnetization film 17 to be equal to or less than the transition temperature. |
