| 摘要 |
<p>To provide an aluminum/silicon carbide composite suitable as a base plate for a ceramic circuit plate on which semiconductor components are mounted, for which high reliability is required. An aluminum/silicon carbide composite which is prepared by infiltrating a flat silicon carbide porous body with a metal containing aluminum as the main component, which has an aluminum alloy layer made of a metal containing aluminum as the main component on both principal planes, and of which one principal plane is bonded to a circuit plate and the other principal plane is utilized as a radiation plane, characterized in that the radiation plane of the silicon carbide porous body is formed or machined into a convexly bowed shape, and after infiltration with the metal containing aluminum as the main component, the aluminum alloy layer on the radiation plane is further machined to form bow.</p> |
