FLOATING GATE INCLUDING HETEROMETAL NANOCRYSTALS, MANUFACTURING METHOD FOR THE SAME, AND SEMICONDUCTOR DEVICE HAVING THE SAME

摘要

PURPOSE: A floating gate which includes hetero metal nano crystal, a manufacturing method thereof, and a semiconductor device which includes the floating gate are provided to control the particle size and density of the metal nano crystal, thereby easily controlling charge capacity. CONSTITUTION: A floating gate for a semiconductor device stores charge by being arranged between a tunneling oxide film and control oxide film. A plurality of first metal nano crystals(30) is arranged in the tunneling oxide film. A first self-assembled monolayer(SAM,40) is arranged in the tunneling oxide film in which the first metal nano crystal is arranged. A plurality of second metal nano crystals(50) is arranged in the first self-assembled monolayer.