| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain an image data of high picture quality which is made smaller in pixel size and free of color mixing and crosstalk, without complicating a manufacturing process, while a latchup is prevented from occurring in a peripheral circuit region. <P>SOLUTION: The element is provided with a p-type semiconductor substrate 1, a p-type well layer 3 formed above the substrate, an n-type photoelectric conversion layer formed within a p-type well layer 3 as a light receiving portion 4, and a floating n-type accumulation layer 2 between the p-type semiconductor substrate and the p-type well layer 3. This floating n-type accumulation layer 2 is formed all over the pixel area including a light-shielding pixel area OB, but not on a CMOS circuit portion side on the periphery of the pixel area. <P>COPYRIGHT: (C)2012,JPO&INPIT |
