| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a power semiconductor device capable of improving the life of a wire junction part. <P>SOLUTION: An IGBT chip 10 (power semiconductor element) is mounted on an insulation substrate 2. An emitter electrode 12 (main electrode) on the upper surface of the IGBT chip 10 is electrically connected to an emitter electrode pattern 7 (electrode pattern) on the insulation substrate 2 by a metal wire 16 (electrical connection member). Further, the emitter electrode 12 is thermally connected to a heat radiation pattern 8 on the insulation substrate 2 by a metal wire 22 (thermal connection member). The emitter electrode pattern 7 is connected to the outside of the device, for energization to the emitter electrode pattern 7 and the metal wire 16. Meanwhile the heat radiation pattern 8 is not connected to the outside of the device, with no energization to the heat radiation pattern 8 and the metal wire 22. <P>COPYRIGHT: (C)2012,JPO&INPIT |
