| 发明名称 |
METHOD FOR PRODUCING A MAGNETIC TUNNEL JUNCTION AND MAGNETIC TUNNEL JUNCTION THUS OBTAINED |
| 摘要 |
According to this method for producing a magnetic tunnel junction, a film of a dielectric material capable of acting as a tunnel barrier is deposited between two nanocrystalline or amorphous magnetic films. The dielectric material constituting the tunnel barrier consists of an at least partially crystalline perovskite, and said material is deposited by ion beam sputtering in a vacuum chamber.
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| 申请公布号 |
US2011266642(A1) |
申请公布日期 |
2011.11.03 |
| 申请号 |
US201113112050 |
申请日期 |
2011.05.20 |
| 申请人 |
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE;COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIE ALTERNATIVES |
发明人 |
VIALA BERNARD;CYRILLE MARIE-CLAIRE;DIENY BERNARD;GARELLO KEVIN;REDON OLIVIER |
| 分类号 |
H01L29/82;H01L21/20 |
主分类号 |
H01L29/82 |
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