发明名称 |
Nonvolatile memory device, storage system having the same, and method of driving the nonvolatile memory device |
摘要 |
A nonvolatile memory device includes a memory cell array including a plurality of nonvolatile memory cells each having a resistance corresponding to one of a plurality of first resistance distributions, a temperature compensation circuit including one or more reference cells each having a resistance corresponding to one among one or more second resistance distributions, and a data read circuit including a compensation unit and a sense amplifier, the compensation unit being adapted to supply compensation current to a sensing node, an amount of the compensation current varying based on the resistance of each reference cell, and the sense amplifier being adapted to compare the level of the sensing node with a reference level and to output a comparison result.
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申请公布号 |
US8050084(B2) |
申请公布日期 |
2011.11.01 |
申请号 |
US20100893413 |
申请日期 |
2010.09.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BAE JUN-SOO;LEE KWANG-JIN;CHO BEAK-HYUNG |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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