发明名称 Method for treating non-planar structures using gas cluster ion beam processing
摘要 A method for treating a structure is described. One embodiment includes forming a structure on a substrate, wherein the structure has a plurality of surfaces including one or more first surfaces lying substantially parallel to a first plane parallel with said substrate and one or more second surfaces lying substantially perpendicular to the first plane. Additionally, the method comprises directing a gas cluster ion beam (GCIB) formed from a material source toward the substrate with a direction of incidence, and orienting the substrate relative to the direction of incidence. The method further comprises treating the one or more second surfaces.
申请公布号 US8048788(B2) 申请公布日期 2011.11.01
申请号 US20090575887 申请日期 2009.10.08
申请人 TEL EPION INC. 发明人 HAUTALA JOHN J.;RUSSELL NOEL
分类号 H01L21/425 主分类号 H01L21/425
代理机构 代理人
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