| 摘要 |
Embodiments of the invention provide methods for forming dielectric materials on a substrate. In one embodiment, a method includes exposing a substrate surface to a first oxidizing gas during a pretreatment process, wherein the first oxidizing gas contains a mixture of ozone and oxygen having an ozone concentration within a range from about 1 atomic percent to about 50 atomic percent and forming a hafnium-containing material on the substrate surface by exposing the substrate surface sequentially to a deposition gas and a second oxidizing gas during an atomic layer deposition (ALD) process, wherein the deposition gas contains a hafnium precursor, the second oxidizing gas contains water, and the hafnium-containing material has a thickness within a range from about 5 Å to about 300 Å. In one example, the hafnium-containing material contains hafnium oxide having the chemical formula of HfOx, whereas x is less than 2, such as about 1.8.
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