| 摘要 |
A semiconductor integrated circuit device includes: a substrate which has a first conductivity type and in which a first amplifier area and a second amplifier area are defined; a first well which has a second conductivity type, a first pocket well which has the first conductivity type and is separated from the first well, and a first deep well which has the second conductivity type, surrounds the first pocket well, and is separated from the first well; and a second well which has the second conductivity type, a second pocket well which has the first conductivity type and is separated from the second well, and a second deep well which has the second conductivity type, surrounds the second pocket well, and is separated from the second well The first well, the first pocket well, and the first deep well are formed in the first amplifier area of the substrate, and the second well, the second pocket well, and the second deep well are formed in the second amplifier area of the substrate.
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