发明名称 |
METHOD FOR PRODUCING LOW REFLECTION SUBSTRATE, METHOD FOR MANUFACTURING PHOTOVOLTAIC DEVICE, AND PHOTOVOLTAIC DEVICE |
摘要 |
<p>A method for producing a low reflection substrate according to one embodiment of the present invention comprises: a step wherein a high concentration impurity diffusion layer (2) is formed on a main surface of a (100) single crystal silicon substrate (1a); a step wherein an etching-resistant film (3) is formed on the high concentration impurity diffusion layer (2); a step wherein the etching-resistant film (3) is subjected to a sandblasting process so that an opening (4), which penetrates through the etching-resistant film (3) and reaches the high concentration impurity diffusion layer (2), is formed; a step wherein anisotropic etching is carried out via the opening (4) using an aqueous alkaline solution to which the etching-resistant film (3) is resistant, while having the etching-resistant film (3) provided with the opening (4) serve as a protective mask; and a step wherein the etching-resistant film (3) is removed after the etching.</p> |
申请公布号 |
WO2011132340(A1) |
申请公布日期 |
2011.10.27 |
申请号 |
WO2010JP69618 |
申请日期 |
2010.11.04 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION;HIZA, SHUICHI;MATSUNO, SHIGERU;NISHIMURA, KUNIHIKO |
发明人 |
HIZA, SHUICHI;MATSUNO, SHIGERU;NISHIMURA, KUNIHIKO |
分类号 |
H01L21/308;H01L31/068;H01L31/18 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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