发明名称 METHOD FOR PRODUCING LOW REFLECTION SUBSTRATE, METHOD FOR MANUFACTURING PHOTOVOLTAIC DEVICE, AND PHOTOVOLTAIC DEVICE
摘要 <p>A method for producing a low reflection substrate according to one embodiment of the present invention comprises: a step wherein a high concentration impurity diffusion layer (2) is formed on a main surface of a (100) single crystal silicon substrate (1a); a step wherein an etching-resistant film (3) is formed on the high concentration impurity diffusion layer (2); a step wherein the etching-resistant film (3) is subjected to a sandblasting process so that an opening (4), which penetrates through the etching-resistant film (3) and reaches the high concentration impurity diffusion layer (2), is formed; a step wherein anisotropic etching is carried out via the opening (4) using an aqueous alkaline solution to which the etching-resistant film (3) is resistant, while having the etching-resistant film (3) provided with the opening (4) serve as a protective mask; and a step wherein the etching-resistant film (3) is removed after the etching.</p>
申请公布号 WO2011132340(A1) 申请公布日期 2011.10.27
申请号 WO2010JP69618 申请日期 2010.11.04
申请人 MITSUBISHI ELECTRIC CORPORATION;HIZA, SHUICHI;MATSUNO, SHIGERU;NISHIMURA, KUNIHIKO 发明人 HIZA, SHUICHI;MATSUNO, SHIGERU;NISHIMURA, KUNIHIKO
分类号 H01L21/308;H01L31/068;H01L31/18 主分类号 H01L21/308
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