METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of exactly controlling overlay of a mask and simplifying processes by forming a nitride spacer before forming wells. CONSTITUTION: An oxide pattern(12a) and the first nitride pattern(14a) are sequentially formed on a semiconductor substrate(10). A nitride spacer(18a) is formed at both sidewalls of the patterns. After forming a BSG(Boron Silicate Glass) layer on the exposed substrate, a P-well is then formed in the substrate(10). Then, an N-well is formed in the substrate.