发明名称 Method for manufacturing semiconductor device
摘要 An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.
申请公布号 US8043936(B2) 申请公布日期 2011.10.25
申请号 US20080232049 申请日期 2008.09.10
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 EGUCHI SHINGO;MONMA YOHEI;TANI ATSUHIRO;HIROSUE MISAKO;HASHIMOTO KENICHI;HOSAKA YASUHARU
分类号 H01L21/30;H01G9/20;H01L21/20;H01L21/322;H01L21/36;H01L21/46 主分类号 H01L21/30
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