发明名称 Stress detection circuit and semiconductor chip including same
摘要 A stress detection circuit includes a function block and a detection signal generation circuit. The function block outputs a first voltage such that the first voltage is varied depending on an extent that the function block is stressed. The detection signal generation circuit generates a stress detection signal based on the first voltage and a second voltage during a test mode. The stress detection signal represents integration of the function block, and a level of the second voltage corresponds to a level of the first voltage before the function block is stressed.
申请公布号 US8042404(B2) 申请公布日期 2011.10.25
申请号 US20080128159 申请日期 2008.05.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JANG YOUNG-CHAN;LEE JUNG-BAE;LEE YUN-SANG
分类号 G01L1/00 主分类号 G01L1/00
代理机构 代理人
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