发明名称 |
Stress detection circuit and semiconductor chip including same |
摘要 |
A stress detection circuit includes a function block and a detection signal generation circuit. The function block outputs a first voltage such that the first voltage is varied depending on an extent that the function block is stressed. The detection signal generation circuit generates a stress detection signal based on the first voltage and a second voltage during a test mode. The stress detection signal represents integration of the function block, and a level of the second voltage corresponds to a level of the first voltage before the function block is stressed.
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申请公布号 |
US8042404(B2) |
申请公布日期 |
2011.10.25 |
申请号 |
US20080128159 |
申请日期 |
2008.05.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JANG YOUNG-CHAN;LEE JUNG-BAE;LEE YUN-SANG |
分类号 |
G01L1/00 |
主分类号 |
G01L1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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