| 摘要 |
A phase change memory with a primary memory array, a reference memory array, and a comparison circuit is provided. The electrical characteristic curve of the recording layers of the primary memory units is different from the electrical characteristic curve of the recording layers of the reference memory units. The primary memory array includes at least one primary memory unit to generate at least one sensing signal, wherein each of the primary memory units includes at least one recording layer can be programmed to a first resistance and a second resistance. The reference memory array includes at least one reference memory unit to generate at least one reference signal, wherein each of the reference memory units includes at least one recording layer can be programmed to change its resistance. The comparison circuit compares the sensing signal and the reference signal to generate a comparison result.
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