发明名称 |
Switching element, method of manufacturing the switching element, and memory element array |
摘要 |
Disclosed is a switching element including: an insulative substrate; a first electrode and a second electrode provided to the insulative substrate; an interelectrode gap between the first electrode and the second electrode, comprising a gap of a nanometer order which causes switching phenomenon of resistance by applying a predetermined voltage between the first electrode and the second electrode; and a sealing member to seal the interelectrode gap such that the gap is retained.
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申请公布号 |
US8045359(B2) |
申请公布日期 |
2011.10.25 |
申请号 |
US20080195165 |
申请日期 |
2008.08.20 |
申请人 |
FUNAI ELECTRIC ADVANCED APPLIED TECHNOLOGY RESEARCH INSTITUTE INC.;FUNAI ELECTRIC CO., LTD. |
发明人 |
FURUTA SHIGEO;TAKAHASHI TSUYOSHI;ONO MASATOSHI |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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