发明名称 Atomic layer deposition systems and methods
摘要 Systems and methods for depositing thin films using Atomic Layer Deposition (ALD). The deposition system includes a process chamber with a peripheral sidewall, partitions that divide a processing space inside the process chamber into at least first and second compartments, and a platter that supports substrates within the processing space. The platter rotates the substrates relative to the stationary peripheral sidewall and compartments. The first compartment receives a process material used to deposit a layer on each of the substrates. An injector, which injects the process material, communicates with the first compartment through the peripheral sidewall.
申请公布号 US8043432(B2) 申请公布日期 2011.10.25
申请号 US20070673852 申请日期 2007.02.12
申请人 TOKYO ELECTRON LIMITED 发明人 DIP ANTHONY
分类号 C23C16/00;H01L21/306 主分类号 C23C16/00
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