发明名称 Failure recovery memory devices and methods
摘要 Memory devices and methods are described that include serially chained memory devices. In one or more of the configurations shown, a serial chain of memory devices includes a number of memory devices, and an error recovery device at an end of the chain. In one configuration shown, the serial chain of memory devices includes a chain of devices where each device is a stacked die memory device. Methods are described that show using the error recovery device in write operations and data recovery operations.
申请公布号 US8046628(B2) 申请公布日期 2011.10.25
申请号 US20090479530 申请日期 2009.06.05
申请人 MICRON TECHNOLOGY, INC. 发明人 RESNICK DAVID R.
分类号 G06F11/00 主分类号 G06F11/00
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