THE METHOD OF FABRICATING THE SEMICONDUCTOR DEVICE

摘要

The invention relates to the semiconductor manufacture field, the invention has provided a method of fabricating a semiconductor device, the method includes: providing a semiconductor substrate; forming an interface layer, a gate dielectric layer and a gate electrode on the substrate; forming a metal oxygen-gettering layer on the gate electrode; carrying out the thermal annealing treatment on the device so as to the oxygen being gettered by the metal oxygen-gettering layer, causing the thickness of the interface layer to decrease. While the thickness of the interface layer can be decreased through this invention, the metal of the metal oxygen-gettering layer is diffused into the gate electrode and/or gate dielectric layer by using annealing process, thus the effect of adjusting effective work function and controlling threshold voltage can be enable.