发明名称 Source/Drain Technology for the Carbon Nano-tube/Graphene CMOS with a Single Self-Aligned Metal Silicide Process
摘要 Electronic devices having carbon-based materials and techniques for making contact to carbon-based materials in electronic devices are provided. In one aspect, a device is provided having a carbon-based material; and at least one electrical contact to the carbon-based material comprising a metal silicide, germanide or germanosilicide. The carbon-based material can include graphene or carbon nano-tubes. The device can further include a segregation region, having an impurity, separating the carbon-based material from the metal silicide, germanide or germanosilicide, wherein the impurity has a work function that is different from a work function of the metal silicide, germanide or germanosilicide. A method for fabricating the device is also provided.
申请公布号 US2011253980(A1) 申请公布日期 2011.10.20
申请号 US20100762832 申请日期 2010.04.19
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 CHANG JOSEPHINE B.;LAVOIE CHRISTIAN;ZHANG ZHEN
分类号 H01L29/775;H01L21/336 主分类号 H01L29/775
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