| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device including a circuit for transmitting an address signal, and to provide an operation method of the semiconductor memory device.SOLUTION: The semiconductor memory device includes: a repair address generating section 340 that generates a repair address signal in response to a normal address signal, a line selection address generating section 350 that generates a line selection address signal by combining the normal address signal and the repair address signal according to the validity of the repair address signal, and a cell line decoding section 320 that selects one of a normal cell area and a redundancy cell area according to the validity of the repair address signal, and selects one of a number of local cell lines provided in the selected cell area in response to the line selection address signal. |
