| 发明名称 |
System and Method of Transistor Switch Biasing in a High Power Semiconductor Switch |
| 摘要 |
A system and method are provided for biasing transistor switches in a semiconductor based high power switch. Off-state Vgsd biasing for the off transistor switches is based upon acceptable levels of spurious harmonic emissions and linearity.
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| 申请公布号 |
US2011254614(A1) |
申请公布日期 |
2011.10.20 |
| 申请号 |
US20100761639 |
申请日期 |
2010.04.16 |
| 申请人 |
SIGE SEMICONDUCTOR INC. |
发明人 |
HUANG CHUN-WEN PAUL;DOHERTY MARK;ANTOGNETTI PHILIP MICHAEL |
| 分类号 |
H03K3/01 |
主分类号 |
H03K3/01 |
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