| 摘要 |
A method is provided for forming a buffered-layer memory cell. The method comprises: forming a bottom electrode; forming a colossal magnetoresistance (CMR) memory film overlying the bottom electrode; forming a memory-stable semiconductor buffer layer, typically a metal oxide, overlying the memory film; and, forming a top electrode overlying the semiconductor buffer layer. In some aspects of the method the semiconductor buffer layer is formed from YBa<SUB>2</SUB>Cu<SUB>3</SUB>O<SUB>7-X </SUB>(YBCO), indium oxide (In<SUB>2</SUB>O<SUB>3</SUB>), or ruthenium oxide (RuO<SUB>2</SUB>), having a thickness in the range of 10 to 200 nanometers (nm). The top and bottom electrodes may be TiN/Ti, Pt/TiN/Ti, In/TiN/Ti, PtRhOx compounds, or PtIrOx compounds. The CMR memory film may be a Pr<SUB>1-X</SUB>Ca<SUB>X</SUB>MnO<SUB>3 </SUB>(PCMO) memory film, where x is in the region between 0.1 and 0.6, with a thickness in the range of 10 to 200 nm. |
