发明名称 Thin film transistor, thin film transistor substrate, processes for producing the same, liquid crystal display using the same, and related devices and processes; and sputtering target, transparent electroconductive film formed by use of this, transparent electrode, and related devices and processes
摘要 Provided are a thin film transistor substrate having a transparent electroconductive film in which residues and so on resulting etching are hardly generated; a process for producing the same; and a liquid crystal display using this thin film transistor substrate. A thin film transistor substrate, comprising a transparent substrate, a source electrode formed over the transparent substrate, a drain electrode formed over the transparent substrate, and a transparent pixel electrode formed over the transparent substrate, wherein the transparent pixel electrode is a transparent electroconductive film which is made mainly of indium oxide, and further comprises one or two or more oxides selected from tungsten oxide, molybdenum oxide, nickel oxide and niobium oxide, and the transparent pixel electrode is electrically connected to the source electrode or the drain electrode; a process for producing the same; and a liquid crystal display using this thin film transistor substrate.
申请公布号 US8038857(B2) 申请公布日期 2011.10.18
申请号 US20050592280 申请日期 2005.03.02
申请人 IDEMITSU KOSAN CO., LTD. 发明人 INOUE KAZUYOSHI;TOMAI SHIGEKAZU;MATSUBARA MASATO
分类号 C23C14/08;C23C14/34;G02F1/1343;G02F1/1362;G02F1/1368;H01B5/14;H01L21/28;H01L21/285;H01L21/308;H01L21/3205;H01L21/336;H01L21/77;H01L27/12;H01L29/45;H01L29/786 主分类号 C23C14/08
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