发明名称 |
Separate layer formation in a semiconductor device |
摘要 |
A semiconductor device is formed. A first gate dielectric layer is formed over the semiconductor layer. A first conductive layer is formed over the first gate dielectric. A first separation layer is formed over the first conductive layer. A trench is formed in the semiconductor layer to separate the first mesa and the second mesa. The trench is filled with an isolation material to a height above a top surface of the first conductive layer. The first conductive layer is removed from the second mesa. A second conductive layer is formed over the first separation layer of the first mesa and over the second mesa. A planarizing etch removes the second conductive layer from over the first mesa. A first transistor of a first type is formed in the first mesa, and a second transistor of a second type is formed in the second mesa.
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申请公布号 |
US8039339(B2) |
申请公布日期 |
2011.10.18 |
申请号 |
US20070738683 |
申请日期 |
2007.04.23 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
GRANT JOHN M.;SAMAVEDAM SRIKANTH B.;VENKATESAN SURESH |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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