发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
In manufacturing processes of a semiconductor device including a shallow trench element isolation region and an interlayer insulating film of a multilayer structure, it is necessary to repeatedly use CMP, but since the CMP itself is costly, the repeated use of the CMP is a cause to increase the manufacturing cost. As an insulating film for use in a shallow trench (ST) element isolation region and/or a lowermost-layer interlayer insulating film, use is made of an insulating coating film that can be coated by spin coating. The insulating coating film has a composition expressed by ((CH3)nSiO2-n/2)x(SiO2)1-x(where n=1 to 3 and 0≦̸x≦̸1.0) and a film with a different relative permittivity k is formed by selecting heat treatment conditions. The STI element isolation region can be formed by modifying the insulating coating film completely to a SiO2 film, while the interlayer insulating film with a small relative permittivity k can be formed by converting it to a state not completely modified.
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申请公布号 |
US2011215384(A1) |
申请公布日期 |
2011.09.08 |
申请号 |
US20080673550 |
申请日期 |
2008.08.14 |
申请人 |
NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY;TOKYO ELECTRON LIMITED;UBE INDUSTRIES, LTD.;UBE-NITTO KASEI CO., LTD. |
发明人 |
OHMI TADAHIRO;MATSUOKA TAKAAKI;INOKUCHI ATSUTOSHI;WATANUKI KOHEI;KOIKE TADASHI;ADACHI TATSUHIKO |
分类号 |
H01L29/78;H01L21/336;H01L21/762;H01L29/06 |
主分类号 |
H01L29/78 |
代理机构 |
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