| 摘要 |
A semiconductor device includes: a ferroelectric capacitor including a first electrode provided above a substrate, a ferroelectric film provided on the first electrode and a second electrode provided on the ferroelectric film; a hydrogen barrier film that covers a top surface and a side surface of the ferroelectric capacitor; an interlayer dielectric film that covers the ferroelectric capacitor and the substrate; a contact hole that penetrates the interlayer dielectric film and the hydrogen barrier film and exposes the second electrode; a barrier metal that covers a top surface of the second electrode exposed in the contact hole and an inner wall surface of the contact hole and is composed of a conductive material having hydrogen barrier property; and a plug conductive section that is embedded in the contact hole and conductively connects to the barrier metal, wherein the inner wall surface of the contact hole at the hydrogen barrier film includes a concave curved surface facing the interior of the contact hole, and the contact hole at the hydrogen barrier film has an inner diameter that gradually becomes smaller toward the second electrode.
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