| 发明名称 |
Nanowire Circuits in Matched Devices |
| 摘要 |
An inverter device includes a first nanowire connected to a voltage source node and a ground node, a first p-type field effect transistor (pFET) device having a gate disposed on the first nanowire, and a first n-type field effect transistor (nFET) device having a gate disposed on the first nanowire.
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| 申请公布号 |
US2011249489(A1) |
申请公布日期 |
2011.10.13 |
| 申请号 |
US20100758939 |
申请日期 |
2010.04.13 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BANGSARUNTIP SARUNYA;COHEN GUY;MAJUMDAR AMLAN;SLEIGHT JEFFREY W. |
| 分类号 |
G11C11/00;H01L21/336;H01L21/8238;H03K19/20 |
主分类号 |
G11C11/00 |
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