PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD

摘要

The disclosed plasma processing device (100) is provided with: a processing vessel (1); a table (3) that supports a plurality of wafers (W); and a plurality of microwave introduction units (27) that introduce electromagnetic waves for causing the generation of plasma at a plurality of sites within the processing vessel (1). The configuration is such that each of the wafers (W) carried on the carrying region (SR) of the table (3) can move relatively in a manner so as to pass through a position facing the microwave-transmitting region of the transmitting plate (28) of at least one of the microwave introduction units (27). The transmitting plates (28) can be disposed in a manner so that the time integral value of plasma density and/or the integral value of plasma irradiation time is the same at any position over the wafers.