ASYMMETRIC WRITE SCHEME FOR MAGNETIC BIT CELL ELEMENTS
摘要
Asymmetric switching is defined for magnetic bit cell elements. A magnetic bit cell for memory and other devices includes a transistor coupled to an MTJ structure. A bit line is coupled at one terminal of the bit cell to the MTJ structure. At another terminal of the bit cell, a source line is coupled to the source/drain terminal of the transistor. The bit line is driven by a bit line driver that provides a first voltage. The source line is driven by a source line driver that provides a second voltage. The second voltage is larger than the first voltage. The switching characteristics of the bit cell and MTJ structure are improved and made more reliable by one or a combination of applying the higher second voltage to the source line and/or reducing the overall parasitic resistance in the magnetic bit cell element.
申请公布号
WO2011127025(A1)
申请公布日期
2011.10.13
申请号
WO2011US31203
申请日期
2011.04.05
申请人
QUALCOMM INCORPORATED;ZHU, XIAOCHUN;RAO, HARI M.;KIM, JUNG PILL;KANG, SEUNG H.
发明人
ZHU, XIAOCHUN;RAO, HARI M.;KIM, JUNG PILL;KANG, SEUNG H.