发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD OF FABRICATING THE SAME |
摘要 |
A semiconductor integrated circuit device and method of fabricating a semiconductor integrated circuit device, the method including preparing a first conductivity type substrate including a first conductivity type impurity such that the first conductivity type substrate has a first impurity concentration; forming a buried impurity layer using blank implant such that the buried impurity layer includes a first conductivity type impurity and has a second impurity concentration higher than the first impurity concentration; forming an epitaxial layer on the substrate having the buried impurity layer thereon; and forming semiconductor devices and a device isolation region in or on the epitaxial layer.
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申请公布号 |
US2011248342(A1) |
申请公布日期 |
2011.10.13 |
申请号 |
US201113070000 |
申请日期 |
2011.03.23 |
申请人 |
KIM YONG-DON;CHANG HOON;PAK SEO-IN |
发明人 |
KIM YONG-DON;CHANG HOON;PAK SEO-IN |
分类号 |
H01L29/78;H01L21/76;H01L21/8234 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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