| 摘要 |
For suggesting a structure capable of achieving both a low start-up voltage and high breakdown voltage, a SiC vertical diode includes a cathode electrode, an n++ cathode layer, an n−drift layer on the n++ cathode layer, a pair of p+ regions, an n+ channel region formed between the n−drift layer and the p+ region and sandwiched between the pair of p+ regions, n++ anode regions and an anode electrode formed on the n++ anode regions and the p+ regions.
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