发明名称 |
Process for preparing single crystal silicon using crucible rotation to control temperature gradient |
摘要 |
The present invention is directed to a process for preparing single crystal silicon, in ingot or wafer form, wherein crucible rotation is utilized to control the average axial temperature gradient in the crystal, G0, as a function of radius (i.e.. G0(r)), particularly at or near the central axis. Additionally, crucible rotation modulation is utilized to obtain an axially uniform oxygen content therein. |
申请公布号 |
EP2177648(A3) |
申请公布日期 |
2011.10.12 |
申请号 |
EP20100152849 |
申请日期 |
2003.10.31 |
申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
LU, ZHENG;KIMBEL, STEVEN L;TAO, YING |
分类号 |
C30B15/30;C30B15/00;C30B15/20;C30B29/06 |
主分类号 |
C30B15/30 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|