Method for forming a nitride semiconductor laminated structure and method for manufacturing a nitride semiconductor element

摘要

A method for forming a nitride semiconductor laminated structure includes forming a first layer that is an n-type or i-type first layer composed of a group III nitride semiconductor using an H2 carrier gas; forming a second layer by laminating a p-type second layer composed of a group III nitride semiconductor and containing Mg on the first layer using an H2 carrier gas; and forming a third layer that is an n-type or i-type third layer composed of a group III nitride semiconductor on the second layer using an H2 carrier gas after forming the second layer. A method for manufacturing a nitride semiconductor device includes the method steps for forming the nitride semiconductor laminated structure.