发明名称 On-die termination latency clock control circuit and method of controlling the on-die termination latency clock
摘要 A semiconductor device includes an on-die termination (ODT) latency clock control circuit and an ODT circuit controlled by the ODT latency clock control circuit. The ODT latency clock control circuit includes an ODT enable signal generator receiving an ODT signal input through an ODT pad of the ODT circuit, and generating an ODT enable signal, and an ODT latency clock generator generating a plurality of ODT latency clocks in response to the ODT enable signal. The ODT enable signal includes an enabling period of a first logic level and a disabling period of a second and different logic level, and the ODT enable signal generator generates the ODT enable signal by increasing the width of the enabling period by a predetermined clock cycle and only generating the clocks during the increased enabling period.
申请公布号 US8035412(B2) 申请公布日期 2011.10.11
申请号 US20100754043 申请日期 2010.04.05
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOO CHUL-HWAN;KIM JUN-BAE;KIM YANG-KI;SHIN JUN-HO
分类号 H03K17/16;H03K19/003 主分类号 H03K17/16
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