发明名称 MOS TRANSISTOR CIRCUIT WITH LEVEL CONVERTER CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide an MOS transistor circuit with a level converter circuit in which operations are free from drawbacks, the number of transistors used is small and the operations are static.SOLUTION: The MOS transistor circuit has a configuration in which the operations of a first CMOS inverter on a high power supply voltage circuit side and a second CMOS inverter on a low power supply voltage circuit side are set so that a transition region TRH of the first CMOS inverter may be included in a change range of an output logic signal of the second CMOS inverter, the first CMOS inverter is used as a level conversion circuit and the first CMOS inverter is driven by the output of the second CMOS inverter.
申请公布号 JP2011199814(A) 申请公布日期 2011.10.06
申请号 JP20100067481 申请日期 2010.03.24
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE & TECHNOLOGY 发明人 SEKIKAWA TOSHIHIRO;HIOKI MASAKAZU;KOIKE HANPEI
分类号 H03K19/0185;H03K19/0948 主分类号 H03K19/0185
代理机构 代理人
主权项
地址