发明名称 |
MOS TRANSISTOR CIRCUIT WITH LEVEL CONVERTER CIRCUIT |
摘要 |
PROBLEM TO BE SOLVED: To provide an MOS transistor circuit with a level converter circuit in which operations are free from drawbacks, the number of transistors used is small and the operations are static.SOLUTION: The MOS transistor circuit has a configuration in which the operations of a first CMOS inverter on a high power supply voltage circuit side and a second CMOS inverter on a low power supply voltage circuit side are set so that a transition region TRH of the first CMOS inverter may be included in a change range of an output logic signal of the second CMOS inverter, the first CMOS inverter is used as a level conversion circuit and the first CMOS inverter is driven by the output of the second CMOS inverter. |
申请公布号 |
JP2011199814(A) |
申请公布日期 |
2011.10.06 |
申请号 |
JP20100067481 |
申请日期 |
2010.03.24 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE & TECHNOLOGY |
发明人 |
SEKIKAWA TOSHIHIRO;HIOKI MASAKAZU;KOIKE HANPEI |
分类号 |
H03K19/0185;H03K19/0948 |
主分类号 |
H03K19/0185 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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