发明名称 X-ray pixels including double photoconductors and x-ray detectors including the x-ray pixels
摘要 Example embodiments are directed to X-ray detectors including double photoconductors. According to example embodiments, the X-ray detector includes a first photoconductor on which X-rays are incident, and a second photoconductor on which X-rays transmitted through the first photoconductor are incident. The first photoconductor and the second photoconductor include a tandem structure. The first photoconductor is formed of silicon and absorbs X-rays in a low energy band, and the second photoconductor is formed of a material that absorbs X-rays in an energy band higher than the low energy band of the X-rays absorbed by silicon.
申请公布号 US2011241143(A1) 申请公布日期 2011.10.06
申请号 US20100923553 申请日期 2010.09.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM SANG-WOOK;PARK JAE-CHUL;KIM SUN-IL;KIM CHANG-JUNG
分类号 H01L31/02;G01T1/24 主分类号 H01L31/02
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