| 摘要 |
A photoelectric conversion apparatus (100) comprises: multiple photoelectric converting units (PD) disposed in a semiconductor substrate; (SB) and isolation portions (103,104,105,106) disposed in the semiconductor substrate. Each photoelectric converting unit includes: a second semiconductor region (107); a third semiconductor region, (109) disposed below the second semiconductor region(107) and a fourth semiconductor region (102) disposed below the third semiconductor region, and each isolation portion includes: a fifth semiconductor region, (104) disposed at a location that is deeper than the surface of the semiconductor substrate and at least extending laterally to the second semiconductor region, containing a first conductivity type impurity; and a sixth semiconductor region,(105) disposed below the fifth semiconductor region and at least extending laterally to the third semiconductor region, containing the first conductivity type impurity, and the diffusion coefficient of the impurity contained in the fifth semiconductor region is lower than the diffusion coefficient of the impurity contained in the sixth semiconductor region. |
