发明名称 |
HEAT TREATMENT APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a heat treatment apparatus that has a temperature detection means installed outside a reaction chamber so as to prevent a process gas from contacting the temperature detection means to form a film and improve reliability and reproduction of a measurement value of the temperature detection means.SOLUTION: The heat treatment apparatus for growing single crystalline films or polycrystalline films on a plurality of substrates includes: a boat configured to hold the plurality of substrates; a cylindrical heat generating material 23 installed to surround the boat and constituting the reaction chamber 32; a reaction tube 21 installed to surround the cylindrical heat generating material; a cylindrical insulating part 25 installed between the cylindrical heat generating material and the reaction tube; a temperature measurement chip 24 installed between the cylindrical heat generating material and the cylindrical insulating part; and a radiation thermometer 42 configured to measure a temperature of the temperature measurement chip, wherein the radiation thermometer is disposed below a lower end of the reaction tube. |
申请公布号 |
JP2011199258(A) |
申请公布日期 |
2011.10.06 |
申请号 |
JP20100274389 |
申请日期 |
2010.12.09 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
MUROBAYASHI MASASUE;YAMAGUCHI TENWA;SHIRAKO KENJI;NISHIDO SHUHEI;SATO AKIHIRO;HARA DAISUKE |
分类号 |
H01L21/205;C23C16/44;H01L21/22;H01L21/31 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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