发明名称 |
SEMICONDUCTOR DIE SINGULATION METHOD |
摘要 |
In one embodiment, a method of singulating semiconductor die from a semiconductor wafer includes forming a material on a surface of a semiconductor wafer and reducing a thickness of portions of the material. Preferably, the thickness of the material is reduced near where singulation openings are to be formed in the semiconductor wafer. |
申请公布号 |
US2011244657(A1) |
申请公布日期 |
2011.10.06 |
申请号 |
US201113156636 |
申请日期 |
2011.06.09 |
申请人 |
|
发明人 |
GRIVNA GORDON M.;PARSEY, JR. JOHN M. |
分类号 |
H01L21/78;B23P17/00;B28D5/00 |
主分类号 |
H01L21/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|