发明名称 SEMICONDUCTOR DIE SINGULATION METHOD
摘要 In one embodiment, a method of singulating semiconductor die from a semiconductor wafer includes forming a material on a surface of a semiconductor wafer and reducing a thickness of portions of the material. Preferably, the thickness of the material is reduced near where singulation openings are to be formed in the semiconductor wafer.
申请公布号 US2011244657(A1) 申请公布日期 2011.10.06
申请号 US201113156636 申请日期 2011.06.09
申请人 发明人 GRIVNA GORDON M.;PARSEY, JR. JOHN M.
分类号 H01L21/78;B23P17/00;B28D5/00 主分类号 H01L21/78
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