发明名称 |
X-RAY DETECTOR WITH OXIDE SEMICONDUCTOR TRANSISTOR |
摘要 |
Example embodiments are directed an X-ray detector including an oxide semiconductor transistor. The X-ray detector including the oxide semiconductor transistor includes an oxide semiconductor transistor and a signal storage capacitor in parallel to each other on a substrate. The oxide semiconductor transistor includes a channel formed of an oxide semiconductor material, and a photoconductor. A pixel electrode and a common electrode are formed on opposite surfaces of the photoconductor. The channel includes ZnO, or a compound including ZnO and at least one selected from a group consisting of gallium (Ga), indium (In), hafnium (Hf), and tin (Sn). |
申请公布号 |
KR20110109066(A) |
申请公布日期 |
2011.10.06 |
申请号 |
KR20100028616 |
申请日期 |
2010.03.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, SUN IL;PARK, JAE CHUL;KIM, SANG WOOK;KIM, CHANG JUNG |
分类号 |
H01L31/115 |
主分类号 |
H01L31/115 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|