发明名称 STANDARD SAMPLE FOR FILM THICKNESS MEASUREMENT, METHOD OF MANUFACTURING THE SAME, METHOD OF MEASURING FILM THICKNESS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To improve stability of a film containing La, of a standard sample used for a film thickness measurement, during storage.SOLUTION: A standard sample for film thickness measurement 100 includes an La containing film 103 provided on a silicon substrate 101 and a protective film 105 provided on top of the La containing film 103 to cover the La containing film 103 and containing a metal nitride. This effectively suppresses a film thickness variation due to degradation of the film 103 containing La during storage. A method of measuring the film thickness is also provided including the step of correcting a measured value of the film thickness of the film containing La using such the standard sample for film thickness measurement 100.
申请公布号 JP2011198996(A) 申请公布日期 2011.10.06
申请号 JP20100064008 申请日期 2010.03.19
申请人 RENESAS ELECTRONICS CORP;TOSHIBA CORP 发明人 IIZUKA TOSHIHIRO;MABE KENZO;IKENO DAISUKE
分类号 H01L21/316;C23C16/52;H01L21/318;H01L29/78 主分类号 H01L21/316
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