发明名称 |
STANDARD SAMPLE FOR FILM THICKNESS MEASUREMENT, METHOD OF MANUFACTURING THE SAME, METHOD OF MEASURING FILM THICKNESS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To improve stability of a film containing La, of a standard sample used for a film thickness measurement, during storage.SOLUTION: A standard sample for film thickness measurement 100 includes an La containing film 103 provided on a silicon substrate 101 and a protective film 105 provided on top of the La containing film 103 to cover the La containing film 103 and containing a metal nitride. This effectively suppresses a film thickness variation due to degradation of the film 103 containing La during storage. A method of measuring the film thickness is also provided including the step of correcting a measured value of the film thickness of the film containing La using such the standard sample for film thickness measurement 100. |
申请公布号 |
JP2011198996(A) |
申请公布日期 |
2011.10.06 |
申请号 |
JP20100064008 |
申请日期 |
2010.03.19 |
申请人 |
RENESAS ELECTRONICS CORP;TOSHIBA CORP |
发明人 |
IIZUKA TOSHIHIRO;MABE KENZO;IKENO DAISUKE |
分类号 |
H01L21/316;C23C16/52;H01L21/318;H01L29/78 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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